CORRELATIONS OF THE REMOTE IMPURITY CHARGES - A METHOD OF 2DEG MOBILITY TUNING IN GAAS/ALGAAS HETEROSTRUCTURES

被引：4

作者：

SUSKI, T ^{[1
]}

WISNIEWSKI, P ^{[1
]}

DMOWSKI, LH ^{[1
]}

GORCZYCA, I ^{[1
]}

SMOLINER, J ^{[1
]}

GORNIK, E ^{[1
]}

BOHM, G ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] TUM,WALTER SCHOTTKY,W-8046 GARCHING,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90274-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low temperature 2DEG mobillity and carrier concentration measurements made on two modulation doped GaAs/AlGaAs heterostructures are described. We demonstrate that, depending on the method which is used to populate the metastable donor states of Si-remote impurity, different values of electron mobility can be obtained for the same 2DEG density and in the same heterostructure. Concept of the correlation in the spatial distribution of the impurity charges (i.e. positively and negatively charged states of Si donor), caused by the Coulomb interactions is employed to explain our experimental finding. The invoked effect induces a strong reduction of the 2DEG scattering and can produce the mobility enhancement by as much as a factor of two over its value with a random distribution of impurity charges.

引用

页码：677 / 680

页数：4

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