IMPROVED ELECTRON MOBILITY HIGHER THAN 106 cm2/Vs IN SELECTIVITY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE.

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Hiyamizu, Satoshi
Saito, Junji
Nanbu, Kazuo
Ishikawa, Tomonori
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Japanese Journal of Applied Physics, Part 2: Letters | 1983年 / 22卷 / 10期
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页码：609 / 611
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