IMPROVED ELECTRON MOBILITY HIGHER THAN 106 cm2/Vs IN SELECTIVITY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE.

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作者：

Hiyamizu, Satoshi

Saito, Junji

Nanbu, Kazuo

Ishikawa, Tomonori

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Japanese Journal of Applied Physics, Part 2: Letters | 1983年 / 22卷 / 10期

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23

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页码：609 / 611

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