MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS LAYER DIRECTLY ON GAP SUBSTRATE

The crystalline quality was investigated, relating to the initial growth process in the 4% lattice mismatched system of GaAs on GaP. A high quality GaAs epilayer was obtained under optimum conditions of As4/Ga beam flux ratio. The results were compared with those of GaAs/Si(100) and GaAs/Si(111). It was clarified that two-dimensional growth, realized under the optimum conditions, leads to high crystalline quality in terms of surface morphology, etch pit density and FWHM value of double crystal X-ray diffraction.