AN INDIUM-FREE MOUNT FOR GAAS SUBSTRATE HEATING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：30

作者：

MARS, DE

MILLER, JN

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：571 / 573

页数：3

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