MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY GAAS LAYER DIRECTLY ON GAP SUBSTRATE

被引：11
|
作者：
TSUJI, M
TAKANO, Y
TORIHATA, T
KANAYA, Y
PAK, K
YONEZU, H
机构：
[1] Toyohashi Univ of Technology, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
Molecular Beam Epitaxy - Optoelectronic Devices - Silicon and Alloys - X-Rays--Diffraction;
D O I：
10.1016/0022-0248(89)90430-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The crystalline quality was investigated, relating to the initial growth process in the 4% lattice mismatched system of GaAs on GaP. A high quality GaAs epilayer was obtained under optimum conditions of As4/Ga beam flux ratio. The results were compared with those of GaAs/Si(100) and GaAs/Si(111). It was clarified that two-dimensional growth, realized under the optimum conditions, leads to high crystalline quality in terms of surface morphology, etch pit density and FWHM value of double crystal X-ray diffraction.
引用
收藏
页码：405 / 409
页数：5
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