IDENTIFICATION OF RESIDUAL DONOR IMPURITIES IN GALLIUM-ARSENIDE

被引：0

作者：

LOW, TS

STILLMAN, GE

WOLFE, CM

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] WASHINGTON UNIV,SEMICOND RES LAB,ST LOUIS,MO 63130

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1982年 / 63期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：143 / 148

页数：6

共 50 条

[41] GALLIUM-ARSENIDE ELECTRONICS
GIBBONS, G
PHYSICS IN TECHNOLOGY, 1987, 18 (01): : 5 - 10
[42] DEFECTING TO GALLIUM-ARSENIDE
不详
SCIENCE NEWS, 1984, 125 (20) : 312 - 312
[43] OXYGEN IN GALLIUM-ARSENIDE
BOURGOIN, JC
STIEVENARD, D
DERESMES, D
ARROYO, JM
JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 284 - 290
[44] GALLIUM-ARSENIDE CHIPS
ROBINSON, P
BYTE, 1984, 9 (12): : 211 - &
[45] ELECTROABSORPTION OF GALLIUM-ARSENIDE
BOBYLEV, BA
KRAVCHENKO, AF
TEREKHOV, AS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1635 - 1638
[46] PHOTOREFLECTION OF GALLIUM-ARSENIDE
PIKHTIN, AN
TODOROV, MT
SEMICONDUCTORS, 1993, 27 (07) : 628 - 631
[47] GALLIUM-ARSENIDE DEVICES
MORKOC, H
SOLID STATE TECHNOLOGY, 1988, 31 (03) : 69 - 69
[48] ELECTROABSORPTION OF GALLIUM-ARSENIDE
KUSHEV, DB
SOKOLOV, VI
SUBASHIE.VK
SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (10): : 2488 - +
[49] RESIDUAL-STRESSES IN GALLIUM-ARSENIDE SINGLE-CRYSTALS
KOVALENKO, VF
LISOVENKO, VD
MARONCHUK, IE
MILVIDSKII, MG
ROGULIN, VY
TUZOVSKII, KA
SHEPEL, LG
INORGANIC MATERIALS, 1990, 26 (02) : 190 - 193
[50] GALLIUM-ARSENIDE TRANSISTORS
FRENSLEY, WR
SCIENTIFIC AMERICAN, 1987, 257 (02) : 80 - +