PHOTOREFLECTION OF GALLIUM-ARSENIDE

被引：0
|
作者：
PIKHTIN, AN
TODOROV, MT
机构：
来源：
SEMICONDUCTORS | 1993年 / 27卷 / 07期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The dependence of the profile of a photoreflection line on the density of free carriers at room temperature has been studied. An increase in this density broadened the photoreflection spectrum in the region of E0 and also near E0 + DELTA0. The contribution of a surface region of finite dimensions d(R) to the reflection and photoreflection processes has been identified. The influence of a nonuniform distribution of the electric field in this region on the spectral profile and on the experimentally determined intensity of the surface electric field has been established. The results obtained can be used to monitor the density of free carriers in thin epitaxial films.
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页码：628 / 631
页数：4
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