IDENTIFICATION OF RESIDUAL DONOR IMPURITIES IN GALLIUM-ARSENIDE

被引:0
|
作者
LOW, TS
STILLMAN, GE
WOLFE, CM
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] WASHINGTON UNIV,SEMICOND RES LAB,ST LOUIS,MO 63130
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:143 / 148
页数:6
相关论文
共 50 条
  • [21] MAGNETIC-SUSCEPTIBILITY OF CHROMIUM IMPURITIES IN GALLIUM-ARSENIDE
    BRODOVOI, AV
    BRODOVOI, VA
    LASHKAREV, GV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (09): : 1053 - 1054
  • [22] INVESTIGATION OF NEUTRAL STATE OF COBALT IMPURITIES IN GALLIUM-ARSENIDE
    ANDRIANOV, DG
    SAVELEV, AS
    SUCHKOVA, NI
    RASHEVSKAYA, EP
    FILIPPOV, MA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 858 - 860
  • [23] DETERMINATION OF TRACE IMPURITIES IN GALLIUM AND GALLIUM-ARSENIDE BY NEUTRON ACTIVATION ANALYSIS
    NEEB, KH
    STOCKERT, H
    BRAUN, R
    BLEICH, HP
    ZEITSCHRIFT FUR ANALYTISCHE CHEMIE FRESENIUS, 1969, 245 (04): : 233 - &
  • [24] GALLIUM-ARSENIDE
    HARRISON, RJ
    OCCUPATIONAL MEDICINE-STATE OF THE ART REVIEWS, 1986, 1 (01): : 49 - 58
  • [25] GALLIUM-ARSENIDE
    THOMPSON, WL
    IRON AGE, 1983, 226 (03): : 8 - 8
  • [26] RESIDUAL CONDUCTANCE OF EPITAXIAL-FILMS OF GALLIUM-ARSENIDE
    SYTENKO, TN
    TYAGULSK.IP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (01): : 109 - 110
  • [27] PREFERRED POSITION OF GROUP-IV IMPURITIES IN GALLIUM-ARSENIDE
    FISTUL, VI
    SHMUGUROV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (06): : 654 - 656
  • [28] THE SELECTIVE TRAPPING OF ARSENIC INTERSTITIAL ATOMS BY IMPURITIES IN GALLIUM-ARSENIDE
    COLLINS, JD
    GLEDHILL, GA
    MURRAY, R
    NANDHRA, PS
    NEWMAN, RC
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 151 (02): : 469 - 477
  • [30] SOLUBILITY AND INTERACTION OF DONOR AND ACCEPTOR DOPANTS IN GALLIUM-ARSENIDE
    GALZOV, VM
    KISELEV, AI
    LEBEDEVA, LV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 714 - 717