共 50 条
- [31] PHOTOLUMINESCENCE OF GALLIUM-ARSENIDE DOPED WITH DEEP-LEVEL IMPURITIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (01): : 141 - 142
- [32] INFLUENCE OF PHONONS AND IMPURITIES ON BROADENING OF EXCITONIC SPECTRA IN GALLIUM-ARSENIDE PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 77 (02): : 465 - 472
- [35] PHOTOREFLECTANCE OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 386 - 389
- [38] GALLIUM-ARSENIDE DENDRITES JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (08) : C198 - C198
- [40] BEHAVIOR OF BORON IMPURITIES IN N-TYPE GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03): : 633 - 644