EVIDENCE FOR FACETS WITH (210) AZIMUTH IN MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS(001) SUBSTRATES

被引：3
|
作者：
BENISTY, H
BOCKENHOFF, E
TALNEAU, A
机构：
[1] Laboratoire Central de Recherches, Thomson-CSF, F-91404 Orsay, Domaine de Corbeville
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 16期
关键词：
D O I：
10.1063/1.107120
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present clear experimental evidence that using axes different from the <110> mirror axes of the (001) GaAs surface generally used for lateral patterning and regrowth of nanostructures yield much better faceted morphologies in molecular-beam epitaxy (MBE) at such scales. Growth on [210] and [120BAR] oriented gratings is shown to yield almost perfect (21n) facets (n almost-equal-to 6). A novel directed one-dimensional growth instability is clearly revealed. The microscopic structure of these facets is discussed as well as implications for the growth of quantum wires and dots in the (In,Ga,Al)As system.
引用
收藏
页码：1987 / 1989
页数：3
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