SPUTTERING DURING ION-IMPLANTATION INTO GALLIUM-ARSENIDE

被引：16
|
作者：
FRITZSCHE, CR [1 ]
ROTHEMUND, W [1 ]
机构：
[1] FRAUNHOFER GESELL,INST ANGEW FESTKORPER PHYS,D-7800 FREIBURG,FED REP GER
来源：
APPLIED PHYSICS | 1975年 / 7卷 / 01期
关键词：
D O I：
10.1007/BF00900518
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：39 / 44
页数：6
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