SPUTTERING DURING ION-IMPLANTATION INTO GALLIUM-ARSENIDE

被引：16

作者：

FRITZSCHE, CR ^{[1
]}

ROTHEMUND, W ^{[1
]}

机构：

[1] FRAUNHOFER GESELL,INST ANGEW FESTKORPER PHYS,D-7800 FREIBURG,FED REP GER

来源：

APPLIED PHYSICS | 1975年 / 7卷 / 01期

关键词：

D O I：

10.1007/BF00900518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：39 / 44

页数：6

共 50 条

[31] GALLIUM-ARSENIDE
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[J]. OCCUPATIONAL MEDICINE-STATE OF THE ART REVIEWS, 1986, 1 (01): : 49 - 58
[32] FOCUSED ION-IMPLANTATION OF GALLIUM-ARSENIDE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH LATERALLY GRADED DOPING PROFILES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1832 - 1835
[33] ENERGY-DEPENDENCE OF THE SPUTTERING YIELD OF GALLIUM-ARSENIDE BY ARGON ION-BOMBARDMENT
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[J]. INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1987, 25 (09) : 328 - 330
[34] GALLIUM-ARSENIDE
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[J]. IRON AGE, 1983, 226 (03): : 8 - 8
[35] GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING IN BORON-TRICHLORIDE ARGON MIXTURES
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1599 - 1605
[36] HYDROGEN IMPLANTATION INTO GALLIUM-ARSENIDE - RANGE AND DAMAGE DISTRIBUTIONS
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[J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 463 : 72 - 76
[37] GALLIUM COLLOID FORMATION DURING ION-IMPLANTATION OF GLASS
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 180 (2-3) : 266 - 274
[38] SAMPLE CONTAMINATION CAUSED BY SPUTTERING DURING ION-IMPLANTATION
HEMMENT, PLF
[J]. VACUUM, 1979, 29 (11-1) : 439 - 442
[39] ANISOTROPY OF THE HALIUM ARSENIDE LATTICE DEFORMATION DURING ION-IMPLANTATION
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[40] CARBON-ION-IMPLANTED GALLIUM-ARSENIDE
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[J]. APPLIED PHYSICS LETTERS, 1976, 29 (07) : 438 - 440

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