FOCUSED ION-IMPLANTATION OF GALLIUM-ARSENIDE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH LATERALLY GRADED DOPING PROFILES

被引：6
|
作者：
EVASON, AF
CLEAVER, JRA
AHMED, H
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期
关键词：
D O I：
10.1116/1.584175
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1832 / 1835
页数：4
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