SPUTTERING DURING ION-IMPLANTATION INTO GALLIUM-ARSENIDE

被引：16

作者：

FRITZSCHE, CR ^{[1
]}

ROTHEMUND, W ^{[1
]}

机构：

[1] FRAUNHOFER GESELL,INST ANGEW FESTKORPER PHYS,D-7800 FREIBURG,FED REP GER

来源：

APPLIED PHYSICS | 1975年 / 7卷 / 01期

关键词：

D O I：

10.1007/BF00900518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：39 / 44

页数：6

共 50 条

[41] CARBON-ION-IMPLANTED GALLIUM-ARSENIDE
SHIN, BK
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (07) : 438 - 440
[42] ALUMINUM ION IMPRESSION ONTO GALLIUM-ARSENIDE
TERADA, T
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (04) : 756 - &
[43] MASS AND ENERGY-DEPENDENCE OF THE SPUTTERING YIELD OF GALLIUM-ARSENIDE
BHATTACHARYYA, SR
GHOSE, D
BASU, D
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 47 (03): : 253 - 256
[44] FLUORINE ION IMPLANTATION PROFILES IN GALLIUM-ARSENIDE AS DETERMINED BY AUGER-ELECTRON SPECTROSCOPY
HARRIS, JS
HARRIS, JM
MARCUS, HL
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 598 - &
[45] ANOMALOUS OPTICAL AND ELECTRICAL RECOVERY PROCESSES OF THE PHOTOQUENCHED EL2 DEFECT PRODUCED BY OXYGEN AND BORON ION-IMPLANTATION IN GALLIUM-ARSENIDE
SAMITIER, J
MARCO, S
PEREZRODRIGUEZ, A
MORANTE, JR
BOHER, P
RENAUD, M
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 252 - 259
[46] AN EXAMINATION OF THE REACTIVE SPUTTERING OF SILICON-NITRIDE ON TO GALLIUM-ARSENIDE
BARTLE, DC
ANDREWS, DC
GRANGE, JD
TRIGG, AD
WICKENDEN, DK
[J]. VACUUM, 1983, 33 (07) : 407 - 410
[47] GALLIUM DIFFUSION IN GALLIUM-ARSENIDE
PALFREY, HD
WILLOUGHBY, AFW
BROWN, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C93 - C93
[48] SPUTTERING OF SILICON AND GALLIUM-ARSENIDE WITH MEDIUM ENERGY INTENSE ION-BEAMS OF ARGON AND XENON
PEARMAIN, K
[J]. VACUUM, 1975, 25 (01) : 3 - 7
[49] INFRARED CHARACTERIZATION OF AN EPITAXIAL FILM OF GALLIUM-ARSENIDE ON A GALLIUM-ARSENIDE SUBSTRATE
PALIK, ED
HOLM, RT
GIBSON, JW
[J]. THIN SOLID FILMS, 1977, 47 (02) : 167 - 175
[50] PHOTOREFLECTANCE OF GALLIUM-ARSENIDE
MARONCHUK, YE
SHERSTYAKOV, AP
TOKAREV, AS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 386 - 389

← 1 2 3 4 5 →