ION-IMPLANTATION INTO GALLIUM-ARSENIDE

被引：45
|
作者：
ANHOLT, R
BALASINGAM, P
CHOU, SY
SIGMON, TW
DEAL, M
机构：
[1] STANFORD UNIV,SOLID STATE ELECTR LAB,STANFORD,CA 94305
[2] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期
关键词：
D O I：
10.1063/1.341475
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3429 / 3438
页数：10
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