ION-IMPLANTATION INTO GALLIUM-ARSENIDE

被引：45

作者：

ANHOLT, R

BALASINGAM, P

CHOU, SY

SIGMON, TW

DEAL, M

机构：

[1] STANFORD UNIV,SOLID STATE ELECTR LAB,STANFORD,CA 94305

[2] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1063/1.341475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3429 / 3438

页数：10

共 50 条

[41] PHOTOREFLECTANCE OF GALLIUM-ARSENIDE
MARONCHUK, YE
SHERSTYAKOV, AP
TOKAREV, AS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 386 - 389
[42] GALLIUM-ARSENIDE ISSUE
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[J]. BYTE, 1992, 17 (06): : 20 - 20
[43] GALLIUM-ARSENIDE IN JAPAN
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[J]. ELECTRONICS AND POWER, 1985, 31 (02): : 115 - 118
[44] GALLIUM-ARSENIDE DENDRITES
MOSS, RH
NICHOLSON, HC
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[45] GALLIUM-ARSENIDE ON SILICON
FAN, JCC
[J]. VLSI SYSTEMS DESIGN, 1987, 8 (13): : 80 - 81
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ZELEVINSKAYA, VM
KACHURIN, GA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (08): : 1455 - +
[47] PHOTO-LUMINESCENCE OF GALLIUM-ARSENIDE DOPED BY SILICON IMPLANTATION
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (10): : 1211 - 1213
[48] FORMATION OF DEFECTS IN GALLIUM-ARSENIDE DURING IMPLANTATION OF PHOSPHORUS IONS
TASHLYKOV, IS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (11): : 1274 - 1276
[49] DEFECTING TO GALLIUM-ARSENIDE
不详
[J]. SCIENCE NEWS, 1984, 125 (20) : 312 - 312
[50] GALLIUM-ARSENIDE ELECTRONICS
GIBBONS, G
[J]. PHYSICS IN TECHNOLOGY, 1987, 18 (01): : 5 - 10