INFLUENCE OF THIN INTERFACIAL SILICON-OXIDE LAYERS ON THE SCHOTTKY-BARRIER BEHAVIOR OF TI ON SI(100)

被引：62
|
作者：
ABOELFOTOH, MO [1 ]
机构：
[1] ROYAL INST TECHNOL,DEPT SOLID STATE ELECTR,S-10044 STOCKHOLM 70,SWEDEN
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.39.5070
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5070 / 5078
页数：9
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