WIDE-RANGE OF SCHOTTKY-BARRIER HEIGHT FOR METAL CONTACTS TO GAAS CONTROLLED BY SI INTERFACE LAYERS

被引：25

作者：

WALDROP, JR

GRANT, RW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584235

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1432 / 1435

页数：4

共 50 条

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