WIDE-RANGE OF SCHOTTKY-BARRIER HEIGHT FOR METAL CONTACTS TO GAAS CONTROLLED BY SI INTERFACE LAYERS

被引：25

作者：

WALDROP, JR

GRANT, RW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584235

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1432 / 1435

页数：4

共 50 条

[1] EFFECT OF SI AND GE INTERFACE LAYERS ON THE SCHOTTKY-BARRIER HEIGHT OF METAL CONTACTS TO GAAS
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[J]. CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 125 - 136
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 1002 - 1004
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[4] INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS
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[9] SCHOTTKY-BARRIER HEIGHT OF METAL-GAAS SYSTEMS
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[10] INTERFACE STOICHIOMETRY DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF COGA AND GAAS
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