EFFECT OF SI AND GE INTERFACE LAYERS ON THE SCHOTTKY-BARRIER HEIGHT OF METAL CONTACTS TO GAAS

被引：1

作者：

WALDROP, JR

GRANT, RW

机构：

来源：

CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES | 1989年 / 148卷

关键词：

D O I：

10.1557/PROC-148-125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：125 / 136

页数：12

共 50 条

[1] WIDE-RANGE OF SCHOTTKY-BARRIER HEIGHT FOR METAL CONTACTS TO GAAS CONTROLLED BY SI INTERFACE LAYERS
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GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1432 - 1435
[2] SCHOTTKY-BARRIER HEIGHT OF IDEAL METAL CONTACTS TO GAAS
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[J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 1002 - 1004
[3] METAL CONTACTS TO GAAS WITH 1 EV SCHOTTKY-BARRIER HEIGHT
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[J]. APPLIED PHYSICS LETTERS, 1988, 52 (21) : 1794 - 1796
[4] COVALENT BONDING OF METAL ATOMS AT SCHOTTKY-BARRIER INTERFACE OF GAAS, GE, AND SI
ROWE, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 798 - 801
[5] INTERFACE CHEMISTRY OF METAL-GAAS SCHOTTKY-BARRIER CONTACTS
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GRANT, RW
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 630 - 632
[6] ELECTRICAL-PROPERTIES OF IDEAL METAL CONTACTS TO GAAS - SCHOTTKY-BARRIER HEIGHT
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 445 - 448
[7] INFLUENCE OF S AND SE ON THE SCHOTTKY-BARRIER HEIGHT AND INTERFACE CHEMISTRY OF AU CONTACTS TO GAAS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1197 - 1201
[8] MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF THE YB/GAAS INTERFACE
HIROSE, K
AKIMOTO, K
HIROSAWA, I
MIZUKI, J
MIZUTANI, T
MATSUI, J
[J]. PHYSICAL REVIEW B, 1989, 39 (11): : 8037 - 8039
[9] REFRACTORY-METAL CONTACTS TO GAAS - INTERFACE CHEMISTRY AND SCHOTTKY-BARRIER FORMATION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 607 - 610
[10] SCHOTTKY-BARRIER HEIGHT OF METAL-GAAS SYSTEMS
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[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (02): : K115 - +

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