EFFECT OF SI AND GE INTERFACE LAYERS ON THE SCHOTTKY-BARRIER HEIGHT OF METAL CONTACTS TO GAAS

被引：1
|
作者：
WALDROP, JR
GRANT, RW
机构：
来源：
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES | 1989年 / 148卷
关键词：
D O I：
10.1557/PROC-148-125
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：125 / 136
页数：12
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