INFLUENCE OF THIN INTERFACIAL SILICON-OXIDE LAYERS ON THE SCHOTTKY-BARRIER BEHAVIOR OF TI ON SI(100)

被引：62
|
作者：
ABOELFOTOH, MO [1 ]
机构：
[1] ROYAL INST TECHNOL,DEPT SOLID STATE ELECTR,S-10044 STOCKHOLM 70,SWEDEN
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.39.5070
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5070 / 5078
页数：9
相关论文
共 50 条
  • [41] Local interface dipoles and the tuning of the Al/GaAs(100) Schottky-barrier height with ultrathin Si interlayers
    Berthod, C
    Binggeli, N
    Baldereschi, A
    EUROPHYSICS LETTERS, 1996, 36 (01): : 67 - 72
  • [42] CHARACTERIZATION OF RF SPUTTER DEPOSITED TI-W SCHOTTKY-BARRIER DIODES ON P-SI
    AURET, FD
    PAZ, O
    WHITE, JF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : C241 - C241
  • [43] BARRIER HEIGHT VARIATION IN AL/GAAS SCHOTTKY DIODES WITH A THIN SILICON INTERFACIAL LAYER
    COSTA, JC
    WILLIAMSON, F
    MILLER, TJ
    BEYZAVI, K
    NATHAN, MI
    MUI, DSL
    STRITE, S
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1991, 58 (04) : 382 - 384
  • [44] INFLUENCE OF THE TEMPERATURE ANNEAL ON CHARACTERISTICS OF SOLAR ELEMENTS WITH SCHOTTKY-BARRIER BASED ON THE AMORPHOUS HYDROGENATED SILICON
    ANDREEV, AA
    ABRAMOV, VO
    KOSAREV, AI
    MEZDROGINA, MM
    TERUKOV, EI
    FEOKTISTOV, NA
    FLORINSKII, VY
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (01): : 28 - 31
  • [45] INFLUENCE OF ILLUMINATION CONDITIONS ON THE SPECTRAL RESPONSE OF HYDROGENATED AMORPHOUS-SILICON SCHOTTKY-BARRIER STRUCTURES
    CHATTERJIE, P
    MCELHENY, PJ
    FONASH, SJ
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) : 3803 - 3809
  • [46] REDUCTION OF THE AU-P-ZNSE(100) SCHOTTKY-BARRIER HEIGHT USING A THIN SE INTERLAYER
    CHEN, W
    GAINES, J
    PONZONI, C
    OLEGO, D
    MANGAT, PS
    SOUKIASSIAN, P
    KAHN, A
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 1078 - 1078
  • [47] BARRIER BEHAVIOR OF PLASMA-DEPOSITED SILICON-OXIDE AND NITRIDE AGAINST CU DIFFUSION
    VOGT, M
    DRESCHER, K
    APPLIED SURFACE SCIENCE, 1995, 91 (1-4) : 303 - 307
  • [48] GROWTH-MECHANISM OF THIN SILICON-OXIDE FILMS ON SI(100) STUDIED BY MEDIUM-ENERGY ION-SCATTERING
    GUSEV, EP
    LU, HC
    GUSTAFSSON, T
    GARFUNKEL, E
    PHYSICAL REVIEW B, 1995, 52 (03) : 1759 - 1775
  • [49] The influence of silicide formation on the barrier height of Ti/Si MIS Schottky barriers
    De Bosscher, W
    Van Meirhaeghe, RL
    Hanselaer, PL
    Caenepeel, L
    Laflere, WH
    Cardon, F
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (06) : 376 - 382
  • [50] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces: First-Principles Study
    Nakayama, T.
    Maruta, Y.
    Kobinata, Y.
    SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06): : 913 - 919
12345