INFLUENCE OF THIN INTERFACIAL SILICON-OXIDE LAYERS ON THE SCHOTTKY-BARRIER BEHAVIOR OF TI ON SI(100)

被引：62

作者：

ABOELFOTOH, MO ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,DEPT SOLID STATE ELECTR,S-10044 STOCKHOLM 70,SWEDEN

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5070 / 5078

页数：9

共 50 条

[21] SCHOTTKY-BARRIER HEIGHTS OF TI AND TISI2 ON N-TYPE AND P-TYPE SI(100)
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