Getter formation in silicon by implantation of antimony ions

被引：0

作者：

P. K. Sadovskii

A. R. Chelyadinskii

V. B. Odzhaev

M. I. Tarasik

A. S. Turtsevich

Yu. B. Vasiliev

机构：

[1] Belarusian State University,

[2] Open Joint Stock Company “Integral,undefined

[3] ”,undefined

来源：

Physics of the Solid State | 2013年 / 55卷

关键词：

Antimony; Mosaic Structure; Porous Silicon Layer; Nonequilibrium Charge Carrier; Type Silicon;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A porous silicon layer as a getter of uncontrolled impurities has been prepared by implantation of Sb+ into silicon and subsequent thermal treatments. The lifetime of nonequilibrium charge carriers in n- and p-type silicon wafers with a getter layer is 3–4 times longer than that without a getter.

引用

页码：1156 / 1158

页数：2

共 50 条

[1] Getter formation in silicon by implantation of antimony ions
Sadovskii, P. K.
Chelyadinskii, A. R.
Odzhaev, V. B.
Tarasik, M. I.
Turtsevich, A. S.
Vasiliev, Yu. B.
[J]. PHYSICS OF THE SOLID STATE, 2013, 55 (06) : 1156 - 1158
[2] MIXING OF PHOSPHORUS AND ANTIMONY IONS IN SILICON BY RECOIL IMPLANTATION
KWOK, HL
LAM, YW
WONG, SP
POON, MC
[J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1986, 5 (06) : 633 - 634
[3] IMPLANTATION OF ANTIMONY IONS INTO DIAMOND
VAVILOV, VS
GUKASYAN, MA
KONOROVA, EA
MILYUTIN, YV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (12): : 1998 - 2002
[4] RECOIL IMPLANTATION OF ANTIMONY IN SILICON
BRUEL, M
FLOCCARI, M
GAILLIARD, JP
[J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 93 - 96
[5] RECOIL IMPLANTATION OF ANTIMONY INTO SILICON
GROB, A
GROB, JJ
MESLI, N
SALLES, D
SIFFERT, P
[J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 85 - 92
[6] TOWARDS THE FORMATION OF INTERNAL GETTER IN SILICON PLATES
BABITSKII, YM
VASILYEVA, MV
GRINSHTEIN, PM
MILVIDSKII, MG
REZNIK, VY
[J]. KRISTALLOGRAFIYA, 1990, 35 (05): : 1212 - 1217
[7] Efficiency of formation of radiation defects in silicon upon implantation of silicon and phosphorus ions
Jadan, M
Chelyadinskii, AR
Yavid, VY
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 225 (04): : 516 - 520
[8] Formation of counter doped shallow junctions by boron and antimony implantation and codiffusion in silicon
Solmi, S
Canteri, R
[J]. DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 329 - 334
[9] KINETICS OF DEFECT FORMATION IN SILICON DURING IMPLANTATION OF PHOSPHORUS IONS
DEKHTYAR, YD
SAGALOVICH, GL
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (04): : 477 - 478
[10] THERMODYNAMICS OF FORMATION OF NUCLEI AT THE INTERNAL OXIDE GETTER IN SILICON
PEKAREV, AI
PANASENKOVA, MI
BURMISTROV, AN
BULKIN, PV
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1988, 31 (08): : 25 - 29

← 1 2 3 4 5 →