Getter formation in silicon by implantation of antimony ions

被引：0

作者：

P. K. Sadovskii

A. R. Chelyadinskii

V. B. Odzhaev

M. I. Tarasik

A. S. Turtsevich

Yu. B. Vasiliev

机构：

[1] Belarusian State University,

[2] Open Joint Stock Company “Integral,undefined

[3] ”,undefined

来源：

Physics of the Solid State | 2013年 / 55卷

关键词：

Antimony; Mosaic Structure; Porous Silicon Layer; Nonequilibrium Charge Carrier; Type Silicon;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A porous silicon layer as a getter of uncontrolled impurities has been prepared by implantation of Sb+ into silicon and subsequent thermal treatments. The lifetime of nonequilibrium charge carriers in n- and p-type silicon wafers with a getter layer is 3–4 times longer than that without a getter.

引用

页码：1156 / 1158

页数：2

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