Implantation of Silicon Ions into Sapphire: Low Doses

被引:0
|
作者
N. E. Belova
S. G. Shemardov
S. S. Fanchenko
E. A. Golovkova
O. A. Kondratev
机构
[1] National Research Center “Kurchatov Institute”,
来源
Semiconductors | 2020年 / 54卷
关键词
ion implantation; sapphire; nanoparticles; precipitates; X-ray diffraction analysis; reflectometry;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:912 / 915
页数:3
相关论文
共 50 条
  • [1] Implantation of Silicon Ions into Sapphire: Low Doses
    Belova, N. E.
    Shemardov, S. G.
    Fanchenko, S. S.
    Golovkova, E. A.
    Kondratev, O. A.
    [J]. SEMICONDUCTORS, 2020, 54 (08) : 912 - 915
  • [2] SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS
    HEMMENT, PLF
    PEART, RF
    YAO, MF
    STEPHENS, KG
    ARROWSMITH, RP
    CHATER, RJ
    KILNER, JA
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2): : 292 - 297
  • [3] Defect distributions in silicon implanted with low doses of MeV ions
    Hallén, A
    Keskitalo, N
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 (1-4): : 344 - 348
  • [4] Fabrication of metal's nanoparticles in silicon and sapphire by low energy ion implantation
    Mirkarimov, D. Kh.
    Radjabov, T. D.
    Kamardin, A. I.
    Khakimov, Z. T.
    [J]. 2007 THIRD IEEE/IFIP INTERNATIONAL CONFERENCE IN CENTRAL ASIA ON INTERNET, 2007, : 206 - +
  • [5] SILICON ON SAPPHIRE FOR ION-IMPLANTATION STUDIES
    GROSS, C
    PISCIOTT.BP
    [J]. SOLID STATE TECHNOLOGY, 1974, 17 (11) : 8 - 8
  • [6] ELLIPSOMETRIC STUDY OF SILICON IMPLANTED WITH BORON IONS IN LOW-DOSES
    WATANABE, K
    MIYAO, M
    TAKEMOTO, I
    HASHIMOTO, N
    [J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 518 - 519
  • [7] ION-IMPLANTATION IN SILICON FILMS ON SAPPHIRE
    EKLUND, KH
    HOLMEN, G
    PETERSTROM, S
    [J]. APPLIED PHYSICS LETTERS, 1974, 24 (06) : 283 - 284
  • [8] Proximity gettering of platinum in silicon following implantation with alpha particles at low doses
    Schmidt, DC
    Barbot, JF
    Blanchard, C
    Godey, S
    Ntsoenzok, E
    Svensson, BG
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 71 : 182 - 185
  • [9] SILICON IMPLANTATION OF GAAS AT LOW AND MEDIUM DOSES - RAMAN ASSESSMENT OF THE DOPANT ACTIVATION
    ZEKENG, S
    PREVOT, B
    SCHWAB, C
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (02): : 269 - 273
  • [10] IMPLANTATION AND DETECTION OF LOW ENERGY ARGON IONS IN SILICON SINGLE CRYSTALS
    COMAS, J
    CAROSELL.CA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) : 974 - &