共 50 条
- [21] Implantation of reactive and unreactive ions in silicon [J]. Materials Science Forum, 1997, 258-263 (pt 1): : 611 - 616
- [22] Implantation of N ions on sapphire substrate for improvement of GaN epilayer [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (6 B): : 4267 - 4270
- [23] Implantation of N ions on sapphire substrate for improvement of GaN epilayer [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6B): : 4267 - 4270
- [25] Properties of silicide films formed by the low-energy implantation of metal ions into silicon [J]. Radiotekhnika i Elektronika, 1997, 41 (01): : 125 - 128
- [26] Properties of silicide films formed by low-energy implantation of metal ions into silicon [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1997, 42 (01): : 125 - 128
- [27] The effect of implantation of low-energy ions on the density of states of valence electrons in silicon [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1997, 42 (02): : 240 - 242
- [28] Recoil implantation of boron into silicon by high energy Silicon ions [J]. APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, 2001, 576 : 900 - 903
- [29] DUAL IMPLANTATION OF SILICON WITH BORON AND AGRON IONS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 141 (01): : 93 - 98
- [30] LOW-DEFECT-DENSITY SILICON ON SAPPHIRE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 296 - 303