Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory

被引：0

作者：

Kentaro Kinoshita

Ryosuke Koishi

Takumi Moriyama

Kouki Kawano

Hidetoshi Miyashita

Sang-Seok Lee

Satoru Kishida

机构：

[1] Tottori University,Department of Information and Electronics, Graduate School of Engineering

[2] Tottori Integrated Frontier Research Center,undefined

来源：

MRS Advances | 2016年 / 1卷 / 49期

关键词：

D O I：

10.1557/adv.2016.449

中图分类号：

学科分类号：

摘要：

It is widely received that resistive switching in electrode (EL)/metal oxide (MO)/EL cell is caused by formation and rupture of a conductive filament (CF) consisting of oxygen vacancies, VO’s. However, driving forces that migrate VO’s are not elucidated yet. Considering an experimental fact that good data endurance more than 106 cycles is often observed, an isotropic driving force that gathers oxygen vacancies and form a CF for set switching is required instead of an electric field drift that is widely received as the driving force of set switching.

引用

页码：3373 / 3378

页数：5

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