Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Fully coupled multiphysics simulation of multifilamentary conduction resistive random access memory (MC-RRAM) are performed by developing our own algorithm based on finite difference method to self-consistently solve current transport, heat conduction and oxygen vacancy (V-o) transport equations. The algorithm is validated by comparing the simulated results with that of commercial software. Potential profile, temperature distribution, and Vo density are studied for multifilamentary conduction RRAM cells with three conduction filaments (CFs). Further, randomness of positions of the three CFs is examined, and simulated results reveal that the positions of CFs do not significantly affect the properties of each CF. Interactions among three CFs with distance greater than 2nm are negligible due to its different thermal diffusion barrier which leads to significant difference in the Vo diffusion coefficient.