Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory

被引：0
|
作者：
Kentaro Kinoshita
Ryosuke Koishi
Takumi Moriyama
Kouki Kawano
Hidetoshi Miyashita
Sang-Seok Lee
Satoru Kishida
机构：
[1] Tottori University,Department of Information and Electronics, Graduate School of Engineering
[2] Tottori Integrated Frontier Research Center,undefined
来源：
MRS Advances | 2016年 / 1卷 / 49期
关键词：
D O I：
10.1557/adv.2016.449
中图分类号：
学科分类号：
摘要：
It is widely received that resistive switching in electrode (EL)/metal oxide (MO)/EL cell is caused by formation and rupture of a conductive filament (CF) consisting of oxygen vacancies, VO’s. However, driving forces that migrate VO’s are not elucidated yet. Considering an experimental fact that good data endurance more than 106 cycles is often observed, an isotropic driving force that gathers oxygen vacancies and form a CF for set switching is required instead of an electric field drift that is widely received as the driving force of set switching.
引用
收藏
页码：3373 / 3378
页数：5
相关论文
共 50 条
  • [31] Stable Switching of Resistive Random Access Memory on the Nanotip Array Electrodes
    Tsai, Kun-Tong
    Ho, Chih-Hsiang
    Chang, Wen-Yuan
    Ke, Jr-Jian
    Mungan, Elif Selin
    Wang, Yuh-Lin
    He, Jr-Hau
    [J]. 2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2016,
  • [32] Remote control of resistive switching in TiO2 based resistive random access memory device
    Sahu, Dwipak Prasad
    Jammalamadaka, S. Narayana
    [J]. SCIENTIFIC REPORTS, 2017, 7
  • [33] The study of lithographic variation in resistive random access memory
    Zhang, Yuhang
    He, Guanghui
    Zhang, Feng
    Li, Yongfu
    Wang, Guoxing
    [J]. JOURNAL OF SEMICONDUCTORS, 2024, 45 (05)
  • [34] Important of Oxide Electrodes on the Switching Properties of Resistive Random Access Memory
    Mistry, Bhaumik V.
    Joshi, U. S.
    [J]. DAE SOLID STATE PHYSICS SYMPOSIUM 2018, 2019, 2115
  • [35] Enhanced resistive switching behaviors of organic resistive random access memory devices by adding polyethyleneimine interlayer
    Rahmani, Mehr Khalid
    Khan, Sobia Ali
    Geum, Dae-Myeong
    Jeon, Hyuntak
    Park, Seong Yeon
    Yun, Changhun
    Kang, Moon Hee
    [J]. ORGANIC ELECTRONICS, 2024, 132
  • [36] An Indium-Free Transparent Resistive Switching Random Access Memory
    Zheng, K.
    Sun, X. W.
    Zhao, J. L.
    Wang, Y.
    Yu, H. Y.
    Demir, H. V.
    Teo, K. L.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (06) : 797 - 799
  • [37] Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film
    Yi, Mingdong
    Cao, Yong
    Ling, Haifeng
    Du, Zhuzhu
    Wang, Laiyuan
    Yang, Tao
    Fan, Quli
    Xie, Linghai
    Huang, Wei
    [J]. NANOTECHNOLOGY, 2014, 25 (18)
  • [38] Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory
    Tan, Tingting
    Du, Yihang
    Sun, Yaling
    Zhang, Hua
    Cao, Ai
    Zha, Gangqiang
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (14) : 13445 - 13453
  • [39] Bipolar Resistive Switching Characteristics of TiN/HfOx/ITO Devices for Resistive Random Access Memory Applications
    Tan Ting-Ting
    Chen Xi
    Guo Ting-Ting
    Liu Zheng-Tang
    [J]. CHINESE PHYSICS LETTERS, 2013, 30 (10)
  • [40] Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices
    Kim, Myung Ju
    Jeon, Dong Su
    Park, Ju Hyun
    Kim, Tae Geun
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (20)
12345