The influence of anodic oxide on the electron concentration in n-GaAs

被引：0
|
作者：
V. M. Kalygina
V. V. Vishnikina
А. N. Zarubin
Yu. S. Petrova
М. S. Skakunov
О. P. Тоlbanov
А. V. Тyazhev
Т. М. Yaskevich
机构：
[1] V. D. Kuznetsov Siberian Physical-Technical Institute of National Research Tomsk State University,
[2] National Research Tomsk State University,undefined
来源：
Russian Physics Journal | 2014年 / 56卷
关键词：
anodic oxide annealing; oxygen plasma; defects; gallium vacancies;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The influence of anodic oxide on the electron concentration near the Ga2O3–n-GaAs interface is studied. The coordinate distribution of electrons is obtained as a function of anodizing voltage, duration of treatment of oxide films in oxygen plasma, temperature, and annealing time. A decrease in the electron concentration in a semiconductor after deposition of anodic oxide is accounted for by the appearance of Ga vacancies which act as acceptors in gallium arsenide.
引用
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页码：984 / 989
页数：5
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