ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN delta -DOPED n-GaAs AT T equals 300 K.

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作者：
Schubert, E.F. [1 ]
Cunningham, J.E. [1 ]
Tsang, W.T. [1 ]
机构：
[1] AT&T, Holmdel, NJ, USA, AT&T, Holmdel, NJ, USA
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| 1600年 / 63期
关键词：
DOPED EPITAXIAL LAYERS - DOPING CONCENTRATIONS - ELECTRON-CONCENTRATION ENHANCEMENT - ELECTRON-MOBILITY ENHANCEMENT - HALL-MOBILITY MEASUREMENTS - MATERIAL-GROWTH TECHNOLOGIES;
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