Influence of hydrostatic pressure on the diffusion of hydrogen in n-GaAs:Si

Hydrogen diffusion experiments have been performed in buried silicon doped GaAs epilayers under hydrostatic pressure. The deuterium diffusion profile in n-GaAs:Si depends on the hydrostatic pressure: a plateau followed by a steep decrease progressively appears as the pressure is increased. This has been interpreted as being due to the increasing importance of the trapping-detrapping process of H- on Si+ donors during the hydrogen diffusion. This increase has been attributed to a deepening of the hydrogen acceptor level with respect to the bottom of the Gamma conduction band of GaAs as the hydrostatic pressure increases. Copyright (C) 1996 Published by Elsevier Science Ltd