Influence of hydrostatic pressure on the diffusion of hydrogen in n-GaAs:Si

被引：1
|
作者：
Machayekhi, B
Chevallier, J
Theys, B
Besson, JM
Weill, G
Syfosse, G
机构：
[1] UNIV PARIS 06,URA 782,F-75005 PARIS,FRANCE
[2] UNIV PARIS 06,DEPT HAUTES PRESS,F-75005 PARIS,FRANCE
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 12期
关键词：
semiconductors; impurities in semiconductors; high pressure;
D O I：
10.1016/S0038-1098(96)00517-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Hydrogen diffusion experiments have been performed in buried silicon doped GaAs epilayers under hydrostatic pressure. The deuterium diffusion profile in n-GaAs:Si depends on the hydrostatic pressure: a plateau followed by a steep decrease progressively appears as the pressure is increased. This has been interpreted as being due to the increasing importance of the trapping-detrapping process of H- on Si+ donors during the hydrogen diffusion. This increase has been attributed to a deepening of the hydrogen acceptor level with respect to the bottom of the Gamma conduction band of GaAs as the hydrostatic pressure increases. Copyright (C) 1996 Published by Elsevier Science Ltd
引用
收藏
页码：821 / 824
页数：4
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