The influence of anodic oxide on the electron concentration in n-GaAs

被引：0
|
作者：
V. M. Kalygina
V. V. Vishnikina
А. N. Zarubin
Yu. S. Petrova
М. S. Skakunov
О. P. Тоlbanov
А. V. Тyazhev
Т. М. Yaskevich
机构：
[1] V. D. Kuznetsov Siberian Physical-Technical Institute of National Research Tomsk State University,
[2] National Research Tomsk State University,undefined
来源：
Russian Physics Journal | 2014年 / 56卷
关键词：
anodic oxide annealing; oxygen plasma; defects; gallium vacancies;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The influence of anodic oxide on the electron concentration near the Ga2O3–n-GaAs interface is studied. The coordinate distribution of electrons is obtained as a function of anodizing voltage, duration of treatment of oxide films in oxygen plasma, temperature, and annealing time. A decrease in the electron concentration in a semiconductor after deposition of anodic oxide is accounted for by the appearance of Ga vacancies which act as acceptors in gallium arsenide.
引用
收藏
页码：984 / 989
页数：5
相关论文
共 50 条
  • [31] MINORITY-CARRIER GENERATION CURRENTS DURING ANODIC DISSOLUTION OF N-GAAS
    KUZMAK, AE
    TIMASHEV, SF
    MOLCHANOVA, SA
    SOVIET ELECTROCHEMISTRY, 1975, 11 (02): : 213 - 217
  • [32] INFLUENCE OF PRESSURE ON EFFECTIVE MASSES OF ELECTRONS IN N-GAAS
    SVIRIDOV, IF
    PRESNOV, VA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1972, (03): : 165 - &
  • [33] SURFACE STOICHIOMETRIC CHANGES OF N-GAAS AFTER ANODIC TREATMENT - AN XPS STUDY
    SOLOMUN, T
    MCINTYRE, R
    RICHTERING, W
    GERISCHER, H
    SURFACE SCIENCE, 1986, 169 (2-3) : 414 - 424
  • [34] EFFECT OF ELECTRON-BEAM DEPOSITION RATE ON THE ELECTRICAL-PROPERTIES OF TI/N-GAAS AND PT/N-GAAS CONTACTS
    AURET, FD
    BARNARD, WO
    MEYER, WE
    MYBURG, G
    THIN SOLID FILMS, 1993, 235 (1-2) : 163 - 168
  • [35] Formation of an n-GaAs/n-GaAs regrowth interface without carrier depletion using electron cyclotron resonance hydrogen plasma
    Niwa, T
    Furuhata, N
    Maeda, T
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 441 - 446
  • [36] TEMPERATURE VARIATION OF LOW FIELD ELECTRON MOBILITY IN N-GAAS
    SRIVASTAVA, GP
    MATHUR, PC
    GOYAL, ML
    TRIPATHI, KN
    LOMASH, SK
    DHALL, AK
    PHYSICS LETTERS A, 1973, A 42 (06) : 421 - 422
  • [37] Quantum Interference Controls the Electron Spin Dynamics in n-GaAs
    Belykh, V. V.
    Kuntsevich, A. Yu.
    Glazov, M. M.
    Kavokin, K. V.
    Yakovlev, D. R.
    Bayer, M.
    PHYSICAL REVIEW X, 2018, 8 (03):
  • [38] STRUCTURE OF CONDUCTION BAND AND ANISOTROPY OF ELECTRON SCATTERING IN N-GAAS
    KRAVCHEN.AF
    SARDARJA.WS
    EFIMOV, WW
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 346 - &
  • [39] Influence of hydrogen treatment and annealing processes upon the Schottky barrier height of Au/n-GaAs and Ti/n-GaAs diodes
    Forment, S
    Biber, M
    Van Meirhaeghe, RL
    Leroy, WP
    Türüt, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (12) : 1391 - 1396
  • [40] Electron transport near the Mott transition in n-GaAs and n-GaN
    Romanets, P. N.
    Sachenko, A. V.
    PHASE TRANSITIONS, 2016, 89 (01) : 52 - 59
12345