Modeling and performance analysis of Nanocavity Embedded Dopingless T-shaped Tunnel FET with high-K gate dielectric for biosensing applications

The performance of TFET biosensors is considered to be remarkable as it is has shown strong immunity towards the non-ideal effects occurring in conventional CMOS-based sensors. Though the existing literature has enormous research towards developing biosensors for health care applications, this article endeavors to introduce an analytical model for Nanocavity Embedded Dopingless T-shaped Tunnel FET (NE-DL-TTFET) structure. Sentaurus TCAD simulation data were used to validate the mathematical model’s potential, electric field, and threshold voltage. Device parameters such as length, dielectric constant, and nanocavity thickness have been studied because it is necessary to accomplish a strong ON-state current. Most importantly, sensitivity analysis has been effectively carried out at various levels of biomolecule occupancy. NE-DL-TTFET biosensor outperforms the conventional biosensors for its T-shaped structure along with nanocavity regions embedded on four sides of dual gate metal region. The sensitivity is 107 for the detection of DNA (K = 8.7). This makes the dopingless TTFET sensor to rapidly emerge as a low-power and high-sensitive biosensor in the detection of various biomolecules.