Formation of a donor profile in silicon upon simultaneous implantation of phosphorus and sodium ions

被引：0
|
作者：
V. M. Korol’
V. P. Astakhov
S. A. Vedenyapin
A. V. Zastavnoi
机构：
[1] Southern Federal University,Research Institute of Physics
[2] OAO Sapfir Moscow Plant,undefined
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2011年 / 5卷
关键词：
Surface Investigation; Neutron Technique; Anodic Oxidation; Radiation Defect; Lithium Atom;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A four-point probe method was used to study, as the layers were removed consecutively, the concentration distribution profiles of free electrons in high-resistivity p-Si with implanted P+ and Na+ ions. Anodic oxidation was used to remove layers at a depth of less than 1 μm, and polishing at larger depths. It was shown that the efficiency of diffusion doping of silicon with sodium is determined, to a large extent, by the ratio between the energies of P+ and Na+ ions. If the conditions are optimal, the efficiency of doping by simultaneous implantation of sodium and phosphorus ions is better (by a factor of 2.5 on the average) than that of doping with Na+ ions only.
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页码：358 / 361
页数：3
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