Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon

被引：0
|
作者：
Yu. V. Balakshin
A. V. Kozhemiako
S. Petrovic
M. Erich
A. A. Shemukhin
V. S. Chernysh
机构：
[1] Skobeltsyn Institute of Nuclear Physics,
[2] Lomonosov Moscow State University,undefined
[3] Faculty of Physics,undefined
[4] Moscow State University,undefined
[5] Vinća Institute of Nuclear Sciences,undefined
[6] Center for Quantum Technologies,undefined
[7] Moscow State University,undefined
来源：
Semiconductors | 2019年 / 53卷
关键词：
ion implantation; multiply charged ions; Rutherford backscattering spectroscopy (RBS).;
D O I：
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学科分类号：
摘要：
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页码：1011 / 1017
页数：6
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