BEHAVIOR OF OXYGEN AND NITROGEN UPON SIMULTANEOUS SUBSTOICHIOMETRIC IMPLANTATION INTO SILICON

被引：8
|
作者：
BORUN, AF
DANILIN, AB
MORDKOVICH, VN
TEMPER, EM
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1988年 / 107卷 / 01期
关键词：
D O I：
10.1080/00337578808225715
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：9 / 13
页数：5
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