PECULIARITIES OF BURIED SILICON OXYNITRIDE LAYER SYNTHESIS BY SEQUENTIAL OXYGEN AND NITROGEN ION-IMPLANTATION IN SILICON

被引：11
|
作者：
DANILIN, AB
DRAKIN, KA
KUKIN, VV
MALININ, AA
MORDKOVICH, VN
PETROV, AF
SARAYKIN, VV
VYLETALINA, OI
机构：
[1] Institute of Problems of Microelectronics Technology and High Purity Materials, 142432, Chernogolovka, Moscow District
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 58卷 / 02期
关键词：
D O I：
10.1016/0168-583X(91)95586-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The synthesis of silicon oxynitride buried layers, using the sequential implantation of substoichiometric doses of oxygen and nitrogen ions, has been studied. By using cross-sectional transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS) and infrared transmission spectroscopy we have shown that there is an interrelation between the structure of synthesized layer and the oxygen to nitrogen dose ratio. It has been found that for the chosen implantation and annealing regimes the synthesized structure: consists of buried dielectric, structurally dense, layers which have thicknesses of between 0.12 and 0.185-mu-m. When the nitrogen to oxygen dose ratio is 3.5, the whole buried layer is amorphous and the interfaces of the buried layer are perfect.
引用
收藏
页码：191 / 193
页数：3
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