THE TOP SILICON LAYER OF SOI FORMED BY OXYGEN ION-IMPLANTATION

被引：17
|
作者：
PINIZZOTTO, RF [1 ]
VAANDRAGER, BL [1 ]
MATTESON, S [1 ]
LAM, HW [1 ]
MALHI, SDS [1 ]
HAMDI, AH [1 ]
MCDANIEL, FD [1 ]
机构：
[1] N TEXAS STATE UNIV,DEPT PHYS,DENTON,TX 76203
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 02期
关键词：
D O I：
10.1109/TNS.1983.4332623
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1718 / 1721
页数：4
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