Experimental Evaluation of Reliability of Deep Submicron SOI MOS Transistors at High Temperatures

被引：1

作者：

Benediktov A.S. ^{[1
]}

Shelepin N.A. ^{[1
]}

Ignatov P.V. ^{[1
]}

机构：

[1] Molecular Electronics Research Institute (MERI), Zelenograd, Moscow

来源：

Russian Microelectronics | 2018年 / 47卷 / 3期

关键词：

D O I：

10.1134/S1063739718030034

中图分类号：

学科分类号：

摘要：

In this paper, 0.18–0.5 μm SOI MOS transistors are tested for compliance with the reliability criteria applied to high-temperature electronics and their components. The main parameters of SOI MOS transistors are measured in the temperature range from −60 to +300°С. The specific behavior exhibited by SOI MOS transistors at high temperatures should be taken into account when designing high-temperature integrated circuits so as to avoid premature failures and increase the reliability of devices. © 2018, Pleiades Publishing, Ltd.

引用

页码：217 / 220

页数：3

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