Experimental Evaluation of Reliability of Deep Submicron SOI MOS Transistors at High Temperatures

被引：1
|
作者：
Benediktov A.S. [1 ]
Shelepin N.A. [1 ]
Ignatov P.V. [1 ]
机构：
[1] Molecular Electronics Research Institute (MERI), Zelenograd, Moscow
来源：
Russian Microelectronics | 2018年 / 47卷 / 3期
关键词：
D O I：
10.1134/S1063739718030034
中图分类号：
学科分类号：
摘要：
In this paper, 0.18–0.5 μm SOI MOS transistors are tested for compliance with the reliability criteria applied to high-temperature electronics and their components. The main parameters of SOI MOS transistors are measured in the temperature range from −60 to +300°С. The specific behavior exhibited by SOI MOS transistors at high temperatures should be taken into account when designing high-temperature integrated circuits so as to avoid premature failures and increase the reliability of devices. © 2018, Pleiades Publishing, Ltd.
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页码：217 / 220
页数：3
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