Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga1−xAlxAs semiconductor superlattice

被引：0

作者：

V. N. Mughnetsyan

A. A. Kirakosyan

机构：

[1] Yerevan State University,

来源：

Journal of Contemporary Physics (Armenian Academy of Sciences) | 2009年 / 44卷

关键词：

semiconductor superlattice; quantum dots; interdiffusion; confining potential; band structure; 73.21.La;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of interdiffusion of Al and Ga atoms on the confining potential and band structure of a three-dimensional superlattice, composed of initially spherical GaAs/Ga1−xAlxAs quantum dots, is investigated in the framework of the modified Wood-Saxon potential model. It is shown that the interdiffusion leads to the disappearance of the quantum dots’ spherical symmetry and to the broadening of the superlattice energy minibands.

引用

页码：140 / 144

页数：4

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