Localized States in GaAs/Ga1-XAlxAs Multi-Quantum-Wells

被引：1
|
作者：
Elamri, F. Z. [1 ]
Falyouni, F. [1 ,2 ]
Tahri, Z. [1 ,3 ]
Bria, D. [1 ]
机构：
[1] Univ Mohammed Premier, Fac Sci, Lab Dynam & Opt Mat, Oujda, Morocco
[2] Fac Sci & Tech, Alhociema, Morocco
[3] Ecole Natl Sci Appl, Alhociema, Morocco
来源：
PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ELECTRONIC ENGINEERING AND RENEWABLE ENERGY, ICEERE 2018 | 2019年 / 519卷
关键词：
Transmission; Cavity; Band structure; Al concentration; Localized states; TAMM STATES;
D O I：
10.1007/978-981-13-1405-6_18
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this study, we investigate localized modes associated with a Multi-Quantum-Well (MQW) sandwiched between two substrates with a defect layer deposited in the middle of the system. Due to the defect layer, different kinds of localized modes are found and their properties examined. The localized modes induced by the cavity layer strongly depend on the thickness of defect layer, the well layer as well as on the Al concentration of defect layer. For simultaneously variation the thickness of defect layer or thickness of well layer and the Al concentration, the localized modes show significant variations inside the gap bands. These structures can be used to realize highly sensitive detection devices.
引用
收藏
页码：137 / 145
页数：9
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