共 50 条
- [1] BINDING-ENERGIES OF GROUND AND EXCITED-STATES OF SHALLOW ACCEPTORS IN GAAS/GA1-XALXAS QUANTUM-WELLS [J]. PHYSICAL REVIEW B, 1990, 42 (08): : 5349 - 5352
- [2] EFFECT OF IMAGE FORCES ON THE BINDING-ENERGIES OF IMPURITY ATOMS IN GA1-XALXAS/GAAS/GA1-XALXAS QUANTUM-WELLS [J]. PHYSICAL REVIEW B, 1992, 46 (04): : 2621 - 2624
- [5] Localized States in GaAs/Ga1-XAlxAs Multi-Quantum-Wells [J]. PROCEEDINGS OF THE 1ST INTERNATIONAL CONFERENCE ON ELECTRONIC ENGINEERING AND RENEWABLE ENERGY, ICEERE 2018, 2019, 519 : 137 - 145
- [6] Acoustic phonon dephasing in shallow GaAs/Ga1-xAlxAs single quantum wells [J]. PHYSICA E, 1998, 2 (1-4): : 218 - 221
- [7] BINDING-ENERGIES OF WANNIER EXCITONS IN GA1-XALXAS QUANTUM-WELL WIRES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (10): : 1370 - 1371
- [10] BINDING-ENERGIES OF WANNIER EXCITONS IN GA1-XALXAS QUANTUM-WELL WIRES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (12): : 1875 - 1878