Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga1−xAlxAs semiconductor superlattice

被引：0
|
作者：
V. N. Mughnetsyan
A. A. Kirakosyan
机构：
[1] Yerevan State University,
来源：
Journal of Contemporary Physics (Armenian Academy of Sciences) | 2009年 / 44卷
关键词：
semiconductor superlattice; quantum dots; interdiffusion; confining potential; band structure; 73.21.La;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of interdiffusion of Al and Ga atoms on the confining potential and band structure of a three-dimensional superlattice, composed of initially spherical GaAs/Ga1−xAlxAs quantum dots, is investigated in the framework of the modified Wood-Saxon potential model. It is shown that the interdiffusion leads to the disappearance of the quantum dots’ spherical symmetry and to the broadening of the superlattice energy minibands.
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页码：140 / 144
页数：4
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