ELECTRONIC-STRUCTURES OF GAAS-GA1-XALXAS REPEATED MONOLAYER HETEROSTRUCTURE

被引：34

作者：

CARUTHERS, E ^{[1
]}

LINCHUNG, PJ ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

PHYSICAL REVIEW LETTERS | 1977年 / 38卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.38.1543

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1543 / 1546

页数：4

共 50 条

[1] EFFICIENT GAAS-GA1-XALXAS HETEROSTRUCTURE ELECTROLUMINESCENT DIODES
ULMER, EA
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1265 - +
[2] GAAS-GA1-XALXAS BURIED-HETEROSTRUCTURE INJECTION LASERS
TSUKADA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4899 - 4906
[3] ELECTRONIC-STRUCTURE OF GAAS-GA1-XALXAS QUANTUM WIRES
WONG, KB
JAROS, M
HAGON, JP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1198 - 1203
[4] APPLICATIONS OF SELECTIVE ETCHING IN GAAS-GA1-XALXAS LASER STRUCTURES
TIJBURG, RP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : C262 - C262
[5] CALCULATION OF BOUND EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES
HAUFE, A
[J]. SOLID STATE COMMUNICATIONS, 1988, 67 (09) : 899 - 901
[6] HYDROGENIC IMPURITY STATES IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES
LIU, ZP
LI, TK
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (03): : 691 - 706
[7] INTERSUBBAND ENERGIES IN GAAS-GA1-XALXAS HETEROJUNCTIONS
WIECK, AD
MAAN, JC
MERKT, U
KOTTHAUS, JP
PLOOG, K
WEIMANN, G
[J]. PHYSICAL REVIEW B, 1987, 35 (08): : 4145 - 4148
[8] EFFECTS OF COMPOSITION PROFILE ON CHARACTERISTICS OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS
NAKASHIMA, H
CHINONE, N
TAGUCHI, Y
NAKADA, O
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2688 - 2689
[9] GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK DIODE LASERS
NAKAMURA, M
AIKI, K
UMEDA, J
YARIV, A
YEN, HW
MORIKAWA, T
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 487 - 488
[10] ELECTRONIC-STRUCTURE OF GAAS-GA1-XALXAS QUANTUM WELL AND SAWTOOTH SUPERLATTICES
JAROS, M
WONG, KB
GELL, MA
[J]. PHYSICAL REVIEW B, 1985, 31 (02): : 1205 - 1207

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