Gate Oxide Variability Analysis of a Novel 3 nm Truncated Fin–FinFET for High Circuitry Performance

In this work, we examined the analog and circuitry amplifying capacity of our novel 3 nm Truncated Fin Junctionless bulk FinFET (n-type) with two different oxide thicknesses at this small scale of gate length. Both oxide widths of high K-material HfO2 have their own individual benefits, due to high gate controllability as compared to conventional FinFETs having SiO2 as a gate oxide. The device works best with Tox = 1 nm in terms of power amplification. When tested with this width of gate oxide, we end up with increase of 59.18%, 7.22% and 12.11 times at corresponding peak values of Unilateral power gain (Gu), IP3 and fmax. This actually evident the enhanced performance of TF-FinFET for A.C applications at this high range of frequency of the input signal. When device tested at Tox = 1 nm, we end up with the increase of 45%, 21.45%, 16% and decrease of 65% at the corresponding peak values of Intrinsic delay (ti), Transconductance (gm), Drain current (ID) and OFF-state current (IOFF). These results of simulation also showed the compatibility of TF-FinFET in terms of high-performance analog application. After these analyses, we can expect a strong potential for wide variety of applications to high-speed System on chip from this device.