Influence of doping on gain characteristics of GaInNAs/GaAs quantum well lasers

被引：0
|
作者：
Gönül, B [1 ]
Oduncuoglu, M [1 ]
Dindaroglu, S [1 ]
Yagdiran, B [1 ]
机构：
[1] Gaziantep Univ, Dept Engn Phys, TR-27310 Gaziantep, Turkey
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 02期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the effect of doping on the parameters of transparency carrier density and peak gain of GaInNAs/GaAs quantum well lasers emitting at 1.3 mum and compare the results with that of an equivalent nitrogen-free InGaAs/GaAs structure. A significant reduction in the transparency carrier density by p-type doping and an increase in gain by n-type doping are observed for GaInNAs/GaAs contrary to nitrogen-free InGaAs/GaAs. The results are analysed using the band-anti-crossing model for band gap, effective mass and simple approximate expressions for carrier density and optical gain. Our calculations show that doped III-N-V quantum well active layers may have certain benefits to lasers.
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页码：163 / 169
页数：7
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